Method of making a FinFET device structure having dual metal...

Details Method of making a FinFET device structure having dual metal... Method of making a FinFET device structure having dual metal...

2007-12-06

2010-06-15

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S149000, C438S176000, C438S283000, C438S268000, C257S308000, C257S465000, C257SE21014

Reexamination Certificate

active

07736965

ABSTRACT:
Methods include making a FinFET device structure having multiple FinFET devices (e.g. ntype and/or ptype) with different metal conductors and/or different high-k insulators in the gates formed on a SOI substrate. One such method includes removing a second semiconductor layer from a second metal layer in a region above a second cap layer, from adjoining regions and from regions adjacent to a second fin.

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