Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-20
2009-10-13
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C257SE21508, C257SE21509
Reexamination Certificate
active
07601628
ABSTRACT:
Methods of forming wire and solder bonds are disclosed. In one embodiment, a method includes providing a structure including a wire bond metal region for the wire bond and a solder bond metal region for the solder bond, both regions covered by a silicon nitride layer over a silicon oxide layer; forming in a material a first opening to the silicon oxide layer over the wire bond metal region and a second opening exposing the solder bond metal region; forming the solder bond to the solder bond metal region while the wire bond metal region is covered; exposing the wire bond metal region including removing the silicon oxide layer to the wire bond metal region; and forming the wire bond to the wire bond metal region. Wire bonds and solder bonds can be made accessible on a single multi-part wafer (MPW) or on a single chip, if necessary, and can be formed substantially simultaneously.
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Daubenspeck Timothy H.
Gambino Jeffrey P.
Muzzy Christopher D.
Sauter Wolfgang
Hoffman Warnick LLC
International Business Machines - Corporation
LeStrange Michael
Perkins Pamela E
Smith Zandra V.
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