Wafer stage including electrostatic chuck and method for...

Details Wafer stage including electrostatic chuck and method for... Wafer stage including electrostatic chuck and method for...

2007-08-21

2007-08-21

Goudreau, George A. (Department: 1763)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C438S714000, C134S001200, C427S533000

Reexamination Certificate

active

10864428

ABSTRACT:
A wafer stage including an electrostatic chuck and a method for dechucking a wafer using the wafer stage are provided, wherein, the wafer stage includes an electrostatic chuck support, an electrostatic chuck, a lifting means, and a grounding means including a device for connecting the interconnections for grounding the lifting means. According to the method for dechucking a wafer, when a lifting means is in contact with a rear side of the wafer, the lifting means is grounded. Then, an electrostatic chuck is neutralized by supplying power to electrostatic electrodes, and the wafer is neutralized by supplying plasma to the wafer.

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patent: 4-253356 (1992-09-01), None
patent: 94-20497 (1994-09-01), None

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