Wafer pattern defect detection method and apparatus therefor

Details Wafer pattern defect detection method and apparatus therefor Wafer pattern defect detection method and apparatus therefor

1995-03-10

1996-11-19

Gonzalez, Frank

Optics: measuring and testing

By configuration comparison

With comparison to master, desired shape, or reference voltage

356357, 356389, 356237, 356431, G01B 1100

Patent

active

055768334

ABSTRACT:
A scanning electron beam is formed as a rectangular electron beam. The electro-optical system which forms this rectangular beam has a rectangular-cathode light source and a quadrupole lens system. This rectangular beam is scanned in its short-axis (X-axis) direction by a deflection system while a stage is moved in its long-axis (Y-axis) direction to achieve scanning of the surface of the wafer under inspection. The rectangular beam corresponds to a number of circular beams arranged in a row. Therefore, pixel signals corresponding to a number of pixels equal to the aspect ratio of the rectangular beam (ratio of the length in the long-axis direction to the length in the short-axis direction) are simultaneously output.

REFERENCES:
patent: 4294544 (1981-10-01), Altschuler et al.
patent: 5159231 (1992-10-01), Feller et al.

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