Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent
1992-11-09
1994-11-22
Popek, Joseph A.
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
36518909, 365226, 327534, 327536, G11C 700
Patent
active
053674898
ABSTRACT:
A high density semiconductor device is provided with an improved voltage pumping (bootstrapping) circuit. The voltage pumping circuit generates at an initial power-up state a first output voltage which is substantially identical to the memory device source supply voltage. The pumping circuit then pumps the first output voltage up to a second output voltage which is higher than the first output voltage. The pumping operation is achieved prior to or upon the semiconductor memory device being enabled in response to a series of pulses output from an oscillator.
REFERENCES:
patent: 4403158 (1983-09-01), Slemmer
patent: 5038325 (1991-08-01), Douglas et al.
Choi Do-Chan
Choi Young-Gwon
Jun Dong-Soo
Lee Dong-Jae
Park Chan-Sok
Popek Joseph A.
Samsung Electronics Co,. Ltd.
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