Voltage pumping circuit for semiconductor memory devices

Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit

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Details

36518909, 365226, 327534, 327536, G11C 700

Patent

active

053674898

ABSTRACT:
A high density semiconductor device is provided with an improved voltage pumping (bootstrapping) circuit. The voltage pumping circuit generates at an initial power-up state a first output voltage which is substantially identical to the memory device source supply voltage. The pumping circuit then pumps the first output voltage up to a second output voltage which is higher than the first output voltage. The pumping operation is achieved prior to or upon the semiconductor memory device being enabled in response to a series of pulses output from an oscillator.

REFERENCES:
patent: 4403158 (1983-09-01), Slemmer
patent: 5038325 (1991-08-01), Douglas et al.

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