Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-02-22
2011-02-22
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000
Reexamination Certificate
active
07892968
ABSTRACT:
Methods for via gouging and a related semiconductor structure are disclosed. In one embodiment, the method includes forming a via opening in a dielectric material, the via opening aligned with a conductor; forming a protective coating over the dielectric material and in the via opening; performing via gouging; and removing the protective coating over horizontal surfaces of the dielectric material. A semiconductor structure may include a via having an interface with a conductor, the interface including a three-dimensionally shaped region extending into and past a surface of the conductor, wherein an outer edge of the three-dimensionally shaped region is distanced from an outermost surface of the via.
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Chen Shyng-Tsong
Holmes Steven J.
Horak David V.
Nogami Takeshi
Ponoth Shom
Garber Charles D
Hoffman Warnick LLC
International Business Machines - Corporation
Junge Bryan R
Li Wenjie
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