Via gouging methods and related semiconductor structure

Details Via gouging methods and related semiconductor structure Via gouging methods and related semiconductor structure

2011-02-22

2011-02-22

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000

Reexamination Certificate

active

07892968

ABSTRACT:
Methods for via gouging and a related semiconductor structure are disclosed. In one embodiment, the method includes forming a via opening in a dielectric material, the via opening aligned with a conductor; forming a protective coating over the dielectric material and in the via opening; performing via gouging; and removing the protective coating over horizontal surfaces of the dielectric material. A semiconductor structure may include a via having an interface with a conductor, the interface including a three-dimensionally shaped region extending into and past a surface of the conductor, wherein an outer edge of the three-dimensionally shaped region is distanced from an outermost surface of the via.

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