Vertical wrap-around-gate field-effect-transistor for high...

Details Vertical wrap-around-gate field-effect-transistor for high... Vertical wrap-around-gate field-effect-transistor for high...

2008-05-20

2008-05-20

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S138000, C438S268000, C438S269000

Reexamination Certificate

active

07374990

ABSTRACT:
A vertical transistor having a wrap-around-gate and a method of fabricating such a transistor. The wrap-around-gate (WAG) vertical transistors are fabricated by a process in which source, drain and channel regions of the transistor are automatically defined and aligned by the fabrication process, without photolithographic patterning.

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