Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-02-22
2011-02-22
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29309
Reexamination Certificate
active
07893485
ABSTRACT:
A semiconductor memory device and a design structure including the semiconductor memory device embodied in a machine readable medium is provided. In particular the present invention includes a semiconductor memory device in which a vertical trench semiconductor-oxide-nitride-oxide-semiconductor (SONOS) memory cell is created in a semiconductor-on-insulator (SOI) substrate is provided that allows for the integration of dense non-volatile random access memory (NVRAM) cells in SOI-based complementary metal oxide semiconductor (CMOS) technology. The trench is processed using conventional trench processing and it is processed near the beginning of the inventive method that allows for the fabrication of the memory cell to be fully separated from SOI logic processing.
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Swift, et al., “An Embedded 90nm SONOS Nonvolatile Memory Utilizing Hot Electron Programming and Uniform Tunnel Erase,” IEDM Tech. Dig., Dec. 2002, pp. 927-930.
U.S. Appl. No. 11/164,513, entitled “Vertical SOI Trench SONOS Cell” filed Nov. 28, 2005, First Named Inventor: David Dobuzinsky.
Dobuzinsky David M.
Ho Herbert L.
Mandelman Jack A.
Otani Yoichi
Cai Yuanmin
International Business Machines - Corporation
Movva Amar
Scully , Scott, Murphy & Presser, P.C.
Smith Bradley K
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