Vertical semiconductor device and method of manufacturing the sa

Details Vertical semiconductor device and method of manufacturing the sa Vertical semiconductor device and method of manufacturing the sa

1998-06-15

2000-10-03

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

269276, 269289, 269291, 269478, 269491, H01L 21336

Patent

active

061272302

ABSTRACT:
An n-channel device (10) and a p-channel device (11) are formed from a single epitaxial silicon layer (60,61). During the deposition of the single epitaxial silicon layer (60,61), dopants are added to the epitaxial reaction chamber and subsequently changed to define a drain region (24,33), a channel region (27,34), and a source region (30,35). The dopant concentration is modified during the formation of the channel region (27,34) to create a doping profile (50). The doping profile (50) has a first profile (51) that is constant and a second profile (52) that changes.

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