Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2007-06-12
2007-06-12
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S433000, C257SE29324, C438S459000, C385S018000
Reexamination Certificate
active
11183863
ABSTRACT:
A vertical offset structure and a method for fabricating the same. The vertical offset structure includes a substrate; a fixed electrode fixing portion formed on the substrate; a fixed electrode moving portion formed at a position away from an upper portion of the substrate by a predetermined distance; a spring portion for connecting the fixed electrode fixing portion and the fixed electrode moving portion to each other so that the fixed electrode moving portion moves into a direction substantially perpendicular to a plate surface of the substrate; a movable electrode located away from the upper portion of the substrate by a predetermined distance to have a predetermined interval horizontal to the fixed electrode moving portion; and a cap wafer bonded to a predetermined area of one of the fixed electrode moving portion and the movable electrode.
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Choi Joon-hyock
Kim Jong-pal
Lee Byeung-leul
Lee Sang-woo
Pert Evan
Samsung Electronics Co,. Ltd.
Sandvik Benjamin P.
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