Vertical channel transistor structure and manufacturing...

Details Vertical channel transistor structure and manufacturing... Vertical channel transistor structure and manufacturing...

2006-10-11

2010-10-12

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S268000, C257SE21679, C257SE29309

Reexamination Certificate

active

07811890

ABSTRACT:
A vertical channel transistor structure is provided. The structure includes a substrate, a channel, a cap layer, a charge trapping layer, a source and a drain. The channel is formed in a fin-shaped structure protruding from the substrate. The cap layer is deposited on the fin-shaped structure. The cap layer and the fin-shaped structure have substantially the same width. The charge trapping layer is deposited on the cap layer and on two vertical surfaces of the fin-shaped structure. The gate is deposited on the charge trapping layer and on two vertical surfaces of the fin-shaped structure. The source and the drain are respectively positioned on two sides of the fin-shaped structure and opposite the gate.

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