Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2007-11-06
2009-12-29
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C438S195000, C257SE21421
Reexamination Certificate
active
07638379
ABSTRACT:
Semiconductor devices and methods of making the devices are described. The devices can be implemented in SiC and can include epitaxially grown n-type drift and p-type trenched gate regions, and an n-type epitaxially regrown channel region on top of the trenched p-gate regions. A source region can be epitaxially regrown on top of the channel region or selectively implanted into the channel region. Ohmic contacts to the source, gate and drain regions can then be formed. The devices can include edge termination structures such as guard rings, junction termination extensions (JTE), or other suitable p-n blocking structures. The devices can be fabricated with different threshold voltages, and can be implemented for both depletion and enhanced modes of operation for the same channel doping. The devices can be used as discrete power transistors and in digital, analog, and monolithic microwave integrated circuits.
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Cheng Lin
Mazzola Michael S.
Choi Calvin
Mississippi State University
Morris Manning & Martin LLP
Mulpuri Savitri
Raimund Christopher W.
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