Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-03-30
2000-10-10
Smith, Matthew
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438627, 438628, 438638, 438653, 438654, H01L 21441
Patent
active
061301566
ABSTRACT:
A method of fabricating an interconnect wherein there is initially provided a first layer of electrically conductive interconnect (3). A via (7) is formed which is defined by walls extending to the first layer of interconnect. A layer of titanium (9) is formed between the electrically conductive interconnect and the first layer of electrically conductive metal (11). A first layer of electrically conductive metal is formed on the walls of the via having a predetermined etch rate relative to a specific etch species and a second layer of electrically conductive metal (13) is formed on the first layer of electrically conductive metal having an etch rate relative to the specific etch species greater than the first layer and which preferably extends into the via. The first layer of electrically conductive interconnect is preferably aluminum, the first layer of electrically conductive metal is preferably a metal containing from about one percent by weight to about one hundred percent copper and the rest essentially aluminum and the second layer of electrically conductive metal is preferably copper doped aluminum having a lower copper content than the first electrically conductive layer.
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Abstract of EPO 954015A2 from Derwent, Aochi et al., Apr. 21, 1999.
Dixit Girish A.
Havemann Robert H.
Russell Stephen W.
Anya Igwe
Brady III W. James
Garner Jacqueline J.
Smith Matthew
Telecky Jr. Frederick J.
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