Coating apparatus – Gas or vapor deposition – Work support
Patent
1997-12-16
2000-10-17
Lorin, Francis J.
Coating apparatus
Gas or vapor deposition
Work support
C23C 1600
Patent
active
061325198
ABSTRACT:
A vapor deposition apparatus for supplying raw-material gas into a reactor to form a thin film on a wafer substrate disposed in the reactor by vapor deposition, including at least a rotator for mounting the wafer substrate thereon, a treatment gas introducing port, a straightening vane having plural holes, and a wafer substrate feed-in/out port, wherein the lowermost portion of the wafer feed-in/out port is located at a predetermined height from the upper surface of the rotator, and the difference in height between the lowermost portion of the wafer feed-in/out port and the upper surface of the rotator is set to be larger than the thickness of a transition layer of the upper portion of the rotator. In a vapor deposition method, a wafer substrate is mounted on the rotator to form a thin film having little defect and uniform film thickness on the wafer substrate by using the vapor deposition apparatus.
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Chaki Katuhiro
Fujii Tatsuo
Honda Takaaki
Iwata Katsuyuki
Mitani Shinichi
Lorin Francis J.
Toshiba Ceramics Co. Ltd.
Toshiba Kikai Kabushikikaisha
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