4. Coating apparatus
  5. Gas or vapor deposition
  6. Work support

Takaaki Honda

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Epitaxial growth method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent

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Exhaust processing apparatus

Metallurgical apparatus – With means treating or handling gases exhausted by treating... – By condensing and collecting a volatile constituent
Patent

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High-speed rotational vapor deposition apparatus and high-speed

Coating apparatus – Gas or vapor deposition – Work support
Patent

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Method and apparatus for controlling rise and fall of...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate

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Method for multichamber sheet-after-sheet type treatment

Material or article handling – Apparatus for moving intersupporting articles into – within,... – Stack forming apparatus
Patent

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Profile ID: LFUS-PAI-P-692668

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