Vapor deposition apparatus and vapor deposition method

Coating apparatus – Gas or vapor deposition – Work support

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C23C 1600

Patent

active

061325198

ABSTRACT:
A vapor deposition apparatus for supplying raw-material gas into a reactor to form a thin film on a wafer substrate disposed in the reactor by vapor deposition, including at least a rotator for mounting the wafer substrate thereon, a treatment gas introducing port, a straightening vane having plural holes, and a wafer substrate feed-in/out port, wherein the lowermost portion of the wafer feed-in/out port is located at a predetermined height from the upper surface of the rotator, and the difference in height between the lowermost portion of the wafer feed-in/out port and the upper surface of the rotator is set to be larger than the thickness of a transition layer of the upper portion of the rotator. In a vapor deposition method, a wafer substrate is mounted on the rotator to form a thin film having little defect and uniform film thickness on the wafer substrate by using the vapor deposition apparatus.

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patent: 5595606 (1997-01-01), Fujikawa et al.
Gadgil P. N., "Optimization of a Stagnation Point Flow Reactor Design For Metalorganic Chemical Vapor Deposition By Flow Visualization", vol. 134, No. 3/04, Dec. 1, 1993, pp. 302-312, XP000415696.
Patent Abstracts of Japan, vol. 008, No. 181 (E-261), Aug. 21, 1984 & JP 59 072718 A (Toshiba Corp), Feb. 21, 1995.
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Patent Abstracts of Japan, 5-090167, Apr. 1993.
Patent Abstracts of Japan, 6-216045, Aug. 1994.
Patent Abstracts of Japan, 7-050260, Feb. 1995.

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