Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2005-03-01
2005-03-01
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C427S569000, C430S128000
Reexamination Certificate
active
06861373
ABSTRACT:
A vacuum processing method that includes placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to at least one high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode(s), thereby processing the article. The frequencies and power values of the at least two high-frequency powers supplied satisfy required relationships.
REFERENCES:
patent: 4539068 (1985-09-01), Takagi et al.
patent: 4579618 (1986-04-01), Celestino et al.
patent: 5534070 (1996-07-01), Okamura et al.
patent: 5882424 (1999-03-01), Taylor et al.
patent: 5891252 (1999-04-01), Yokogawa et al.
patent: 6089181 (2000-07-01), Suemasa et al.
patent: 6642149 (2003-11-01), Suemasa et al.
patent: 6696108 (2004-02-01), Murayama et al.
patent: 0 149 089 (1985-07-01), None
patent: 56-45760 (1981-04-01), None
patent: 60-160620 (1985-08-01), None
patent: 62-188783 (1987-08-01), None
patent: 6-287760 (1994-10-01), None
patent: 7-74159 (1995-03-01), None
patent: 7-321105 (1995-12-01), None
patent: 9-321031 (1997-12-01), None
patent: 2000223480 (2000-08-01), None
H. Curtins, et al.,“Influence of Plasma Excitation Frequency for α-Si:H Thin Film Deposition,”Plasma Chemistry and Plasma Processing, vol. 7, No. 3, 1987. Pp. 267-273.
Abe Yukihiro
Akiyama Kazuyoshi
Aoki Makoto
Murayama Hitoshi
Niino Hiroaki
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Jr. Carl Whitehead
Smoot Stephen W.
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