Vacuum processing method and semiconductor device...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers

Reexamination Certificate

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C427S569000, C430S128000

Reexamination Certificate

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06861373

ABSTRACT:
A vacuum processing method that includes placing an article to be processed in a reaction container and simultaneously supplying at least two high-frequency powers having mutually different frequencies to at least one high-frequency electrode to generate plasma in the reaction container by the high-frequency powers introduced into the reaction container from the high-frequency electrode(s), thereby processing the article. The frequencies and power values of the at least two high-frequency powers supplied satisfy required relationships.

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