Use of enhanced turbomolecular pump for gapfill deposition...

Details Use of enhanced turbomolecular pump for gapfill deposition... Use of enhanced turbomolecular pump for gapfill deposition...

2007-02-27

2007-02-27

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S758000, C438S629000, C438S694000

Reexamination Certificate

active

10884628

ABSTRACT:
High flows of low-mass fluent gases are used in an HDP-CVD process for gapfill deposition of a silicon oxide film. An enhanced turbomolecular pump that provides a large compression ratio for such low-mass fluent gases permits pressures to be maintained at relatively low levels in a substrate processing chamber, thereby improving the gapfill characteristics.

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