Upward plug filled via hole device

Details Upward plug filled via hole device Upward plug filled via hole device

1996-04-03

1998-03-10

Zimmerman, John J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257915, 437190, 428332, 428688, 428704, 428650, 428660, H01L 2352, H01L 2912, B32B 1504, B32B 904

Patent

active

057264970

ABSTRACT:
A method of manufacture of a semiconductor device on a silicon semiconductor substrate comprises formation of a first stress layer on the semiconductor substrate, formation of an interconnect layer over the first stress layer, formation of a second stress layer on the interconnect layer, formation of an inter-metal dielectric (IMD) layer over the second stress layer, patterning and etching a via opening through the inter-metal dielectric layer and the second stress layer exposing a contact area on the surface of the metal interconnect layer, and heating the device at a temperature sufficient to squeeze the metal interconnect layer up into the via.

REFERENCES:
patent: 4381595 (1983-05-01), Denda et al.
patent: 4782380 (1988-11-01), Shankar et al.
patent: 5082801 (1992-01-01), Nagata
patent: 5084414 (1992-01-01), Manley et al.
patent: 5200360 (1993-04-01), Bradbury
patent: 5360994 (1994-11-01), Wolters
Sze, VLSI Technology, McGraw-Hill Book Company, p. 409, (1988) no month.

Affiliated with

Also associated with

Rating

Upward plug filled via hole device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Upward plug filled via hole device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Upward plug filled via hole device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-142132