Coating processes – Coating by vapor – gas – or smoke – Base includes an inorganic compound containing silicon or...
Patent
1995-06-07
1997-07-01
Beck, Shrive
Coating processes
Coating by vapor, gas, or smoke
Base includes an inorganic compound containing silicon or...
4272551, 4272552, 437207, 148DIG17, 148DIG27, C23C 1600
Patent
active
056436335
ABSTRACT:
A tungsten silicide film is deposited from WF.sub.6 and SiCl.sub.2 H.sub.2 onto a substrate so that the tungsten to silicon ratio is substantially uniform through the thickness of the WSi.sub.x film, and the WSi.sub.x film is substantially free of fluorine. The film can be deposited by a multi-stage process where the pressure in the chamber is varied, or by a high temperature, high pressure deposition process in a plasma cleaned deposition chamber. Preferably the SiCl.sub.2 H.sub.2 and the WF.sub.6 are mixed upstream of the deposition chamber. A seeding gas can be added to the process gases.
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Aruga Michio
Eizenberg Moshe
Telford Susan G.
Tseng Meng Chu
Applied Materials Inc.
Beck Shrive
Janah Ashok K.
Kwong Raymond K.
Maiorana David M.
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