Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2005-05-10
2005-05-10
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S737000, C257S778000, C257S738000, C257S762000, C257S763000, C257S764000, C257S768000, C257S784000, C257S786000, C257S765000, C257S766000, C257S779000
Reexamination Certificate
active
06891274
ABSTRACT:
An under-bump-metallurgy layer is provided. The under-bump-metallurgy layer is formed over the contact pad of a chip and a welding lump is formed over the under-ball-metallurgy layer. The under-bump-metallurgy layer comprises an adhesion layer, a barrier layer and a wettable layer. The adhesion layer is directly formed over the contact pad. The barrier layer made from a material such as nickel-vanadium alloy is formed over the adhesion layer. The wettable layer made from a material such as copper is formed over the barrier layer. The wettable layer has an overall thickness that ranges from about 3 μm to about 8 μm.
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Chang Chih-Huang
Chen William Tze-You
Cheng Po-Jen
Lee Chun-Chi
Tao Su
Advanced Semiconductor Engineering Inc.
Jianq Chyun IP Office
Williams Alexander Oscar
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