Ultraviolet assisted porogen removal and/or curing processes...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S778000, C438S780000, C438S783000, C257SE21273, C257SE21581

Reexamination Certificate

active

07629272

ABSTRACT:
Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film.

REFERENCES:
patent: 6121130 (2000-09-01), Chua et al.
patent: 6475930 (2002-11-01), Junker et al.
patent: 6596467 (2003-07-01), Gallagher et al.
patent: 6667147 (2003-12-01), Gallagher et al.
patent: 6703324 (2004-03-01), Wong
patent: 6737117 (2004-05-01), Boisvert et al.
patent: 2003/0054115 (2003-03-01), Albano et al.
patent: 2003/0157267 (2003-08-01), Waldfried et al.
patent: 2004/0018319 (2004-01-01), Waldfried et al.
patent: 2004/0058090 (2004-03-01), Waldfried et al.
patent: 2004/0096593 (2004-05-01), Lukas et al.
patent: 2004/0096672 (2004-05-01), Lukas et al.
patent: 2004/0102032 (2004-05-01), Kloster et al.
patent: 2004/0137241 (2004-07-01), Lin et al.
Jeffrey M. Calvert et al., A New Approach to Ultralow-K Dielectrics, Semiconductor International, Nov. 2003, pp. 56-60.
James L. Hedrick et al., Templating Nanoporosity in Thin-Film Dielectric Insulators, Advanced Materials 1998, 10, No. 13, pp. 1049-1053.

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