Two-step STI formation process

Details Two-step STI formation process Two-step STI formation process

2008-05-27

2010-11-30

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S294000, C438S295000, C438S355000, C257SE21545, C257SE21561, C257SE21564, C257SE21628, C257SE21540, C257SE21642, C257S347000, C257SE27112, C257S374000, C257S510000

Reexamination Certificate

active

07842577

ABSTRACT:
A method of forming an integrated circuit structure includes providing a semiconductor substrate; forming a first isolation region in the semiconductor substrate; after the step of forming the first isolation region, forming a metal-oxide-semiconductor (MOS) device at a surface of the semiconductor substrate, wherein the step of forming the MOS device comprises forming a source/drain region; and after the step of forming the MOS device, forming a second isolation region in the semiconductor substrate.

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patent: 1797762 (2006-07-01), None

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