Two-step process for nickel deposition

Details Two-step process for nickel deposition Two-step process for nickel deposition

2005-01-11

2005-01-11

Pert, Evan (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S655000

Reexamination Certificate

active

06841449

ABSTRACT:
Sub-micron dimensioned, ultra-shallow junction MOS and/or CMOS transistor devices are formed by a salicide process wherein a blanket nickel layer is formed in contact with the exposed portions of the substrate surface adjacent the sidewall spacers, the top surface of the gate electrode, and the sidewall spacers. Embodiments include forming the blanket layer of nickel is formed by the sequential steps of: (i) forming a layer of nickel by sputtering with oxygen gas; and, (ii) forming a layer of nickel by sputtering with argon gas. The two step process for forming the blanket layer of nickel advantageously prevents the formation of nickel silicide on the outer surfaces of the insulative sidewall spacers.

REFERENCES:
patent: 6521529 (2003-02-01), Ngo et al.

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