Two step post-deposition treatment of ILD layer for a lower...

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C438S692000, C438S694000, C438S690000, C438S689000, C438S700000, C438S740000, C216S017000, C216S018000, C216S039000, C216S041000, C216S058000, C257S758000, C257S759000, C257S760000

Reexamination Certificate

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10666354

ABSTRACT:
A method of lowering the dielectric constant of an organosilicon low k dielectric layer while improving the hardness and thermal stability is provided. A deposited layer of carbon doped oxide, HSQ, or MSQ is cured and treated with a He plasma which improves hardness for a subsequent CMP step and lowers the dielectric constant. There is no loss of H2O or CH4during the He treatment. The low k dielectric layer is then treated with a H2plasma which converts some of the Si—O and Si—CH3bonds near the surface to Si—H bonds, thereby further lowering the dielectric constant and increasing thermal stability that improves breakdown resistance. Moisture uptake is also reduced. The method is especially useful for interconnect schemes with deep sub-micron ground rules. Surprisingly, the k value obtained from two different plasma treatments is lower than when two He treatments or two H2treatment are performed.

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