Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-07-07
2010-06-15
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S128000, C438S129000
Reexamination Certificate
active
07737016
ABSTRACT:
According to various embodiments, two-print two-etch methods and devices are disclosed that can be used to form features, such as ghost features, on a substrate. The disclosed methods can be incorporated into, for example, altPSM, attPSM, and binary lithographic method for making semiconductor devices. a method of forming a semiconductor device is provided. The exemplary methods can include defining a plurality of first features and at least one ghost feature on a photosensitive layer by exposing a first mask to a light, wherein the first mask comprises a plurality of phase shift areas that change a phase of the light. A portion of a layer disposed under the photosensitive layer can be removed by etching to form the plurality of first features and the at least one ghost feature. One or more structures not requiring phase shifting can then be defined on the photosensitive layer by exposing a second mask to the light, wherein the second mask removes the at least one ghost feature. A second portion of the layer disposed under the photosensitive layer can then be removed by etching to form one or more structures not requiring phase shifting, wherein the second portion includes the at least one ghost feature.
REFERENCES:
patent: 2007/0105391 (2007-05-01), Hashimoto et al.
Kuo, Chen-Cheng “Extension of deep-ultraviolet lithography for patterning logic gates using alternating phase shifting masks” J. Vac. Sci. Technol. B 17(6), Nov./Dec. 1999.
Peterson, John “Designing Dual-Trench Alternating Phase-Shift Masks for 140 nm and Smaller Features Using 248 nm KRF and 193 nm ARF Lithography” Proc. SPIE 3412 503 Apr. 1998.
Blatchford James Walter
Rathsack Benjamen Michael
Brady III Wade J.
Franz Warren L.
Richards N Drew
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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