Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2004-05-20
2009-11-10
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S211000, C438S257000, C257SE27078, C257SE21179
Reexamination Certificate
active
07615436
ABSTRACT:
There is provided a floating gate transistor, such as an EEPROM transistor, and method of making the transistor using two masking steps. The method of making a transistor includes patterning a floating gate layer using a first photoresist mask to form a floating gate rail and doping an active area using the floating gate rail as a mask to form source and drain regions in the active area. The method also includes patterning a control gate layer, a control gate dielectric layer, the floating gate rail, a tunnel dielectric layer and the active area using a second photoresist mask to form a control gate, a control gate dielectric, a floating gate, a tunnel dielectric and a channel island region.
REFERENCES:
patent: 3414892 (1968-12-01), McCormack et al.
patent: 3432827 (1969-03-01), Sarno
patent: 3571809 (1971-03-01), Nelson
patent: 3573757 (1971-04-01), Adams
patent: 3576549 (1971-04-01), Hess
patent: 3582908 (1971-06-01), Koo
patent: 3629863 (1971-12-01), Neale
patent: 3634929 (1972-01-01), Yoshida at al.
patent: 3671948 (1972-06-01), Cassen et al.
patent: 3699543 (1972-10-01), Neale
patent: 3717852 (1973-02-01), Abbas at al.
patent: 3728695 (1973-04-01), Frohman-Bentchkowsky
patent: 3787822 (1974-01-01), Rioult
patent: 3846767 (1974-11-01), Cohen
patent: 3863231 (1975-01-01), Taylor
patent: 3877049 (1975-04-01), Buckley
patent: 3886577 (1975-05-01), Buckley
patent: 3922648 (1975-11-01), Buckley
patent: 3980505 (1976-09-01), Buckley
patent: 3990098 (1976-11-01), Mastrangelo
patent: 4146902 (1979-03-01), Tanimoto et al.
patent: 4177475 (1979-12-01), Holmberg
patent: 4203123 (1980-05-01), Shanks
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
patent: 4272880 (1981-06-01), Pashley
patent: 4281397 (1981-07-01), Neal et al.
patent: 4355375 (1982-10-01), Arakawa
patent: 4419741 (1983-12-01), Stewart et al.
patent: 4420766 (1983-12-01), Kasten
patent: 4442507 (1984-04-01), Roesner
patent: 4489478 (1984-12-01), Sakurai
patent: 4494135 (1985-01-01), Moussie
patent: 4498226 (1985-02-01), Inoue et al.
patent: 4499557 (1985-02-01), Holmberg et al.
patent: 4500905 (1985-02-01), Shibata
patent: 4507757 (1985-03-01), McElroy
patent: 4535424 (1985-08-01), Reid
patent: 4543594 (1985-09-01), Mohsen et al.
patent: 4569121 (1986-02-01), Lim et al.
patent: 4630096 (1986-12-01), Drye
patent: 4639893 (1987-01-01), Eitan
patent: 4646266 (1987-02-01), Ovshinsky et al.
patent: 4672577 (1987-06-01), Hirose
patent: 4677742 (1987-07-01), Johnson
patent: 4710798 (1987-12-01), Marcantonio
patent: 4729005 (1988-03-01), Wei et al.
patent: 4811082 (1989-03-01), Jacobs
patent: 4811114 (1989-03-01), Yamamoto et al.
patent: 4820657 (1989-04-01), Hughes et al.
patent: 4823181 (1989-04-01), Mohsen et al.
patent: 4876220 (1989-10-01), Mohsen et al.
patent: 4881114 (1989-11-01), Mohsen et al.
patent: 4899205 (1990-02-01), Hamdy et al.
patent: 4922319 (1990-05-01), Fukushima
patent: 4943538 (1990-07-01), Mohsen et al.
patent: 5001539 (1991-03-01), Inoue et al.
patent: 5070383 (1991-12-01), Sinar et al.
patent: 5070384 (1991-12-01), McCollum et al.
patent: 5089862 (1992-02-01), Warner, Jr. et al.
patent: 5091762 (1992-02-01), Watanabe
patent: 5160987 (1992-11-01), Pricer et al.
patent: 5191405 (1993-03-01), Tomita et al.
patent: 5202754 (1993-04-01), Bertin et al.
patent: 5266912 (1993-11-01), Kledzik
patent: 5283468 (1994-02-01), Kondo et al.
patent: 5306935 (1994-04-01), Esquivel et al.
patent: 5311039 (1994-05-01), Kimura et al.
patent: 5334880 (1994-08-01), Abadeer et al.
patent: 5383149 (1995-01-01), Hong
patent: 5391518 (1995-02-01), Bhushan
patent: 5391907 (1995-02-01), Jang
patent: 5398200 (1995-03-01), Mazure et al.
patent: 5422435 (1995-06-01), Takiar et al.
patent: 5426566 (1995-06-01), Beilstein, Jr.
patent: 5427979 (1995-06-01), Chang
patent: 5434745 (1995-07-01), Shokrgozar et al.
patent: 5441907 (1995-08-01), Sung et al.
patent: 5453952 (1995-09-01), Okudaira
patent: 5455455 (1995-10-01), Badehi
patent: 5463244 (1995-10-01), De Araujo et al.
patent: 5468997 (1995-11-01), Imai et al.
patent: 5471090 (1995-11-01), Deutsch
patent: 5481133 (1996-01-01), Hsu
patent: 5495398 (1996-02-01), Takiar et al.
patent: 5502289 (1996-03-01), Takiar et al.
patent: 5523622 (1996-06-01), Harada et al.
patent: 5523628 (1996-06-01), Williams et al.
patent: 5535156 (1996-07-01), Levy et al.
patent: 5536968 (1996-07-01), Crafts et al.
patent: 5552963 (1996-09-01), Burns
patent: 5557122 (1996-09-01), Shrivastava et al.
patent: 5559048 (1996-09-01), Inoue
patent: 5561622 (1996-10-01), Bertin et al.
patent: 5572046 (1996-11-01), Takemura
patent: 5581498 (1996-12-01), Ludwig et al.
patent: 5585675 (1996-12-01), Knopf
patent: 5654220 (1997-08-01), Leedy
patent: 5675547 (1997-10-01), Koga
patent: 5693552 (1997-12-01), Hsu
patent: 5696031 (1997-12-01), Wark
patent: 5703747 (1997-12-01), Voldman et al.
patent: 5737259 (1998-04-01), Chang
patent: 5745407 (1998-04-01), Levy et al.
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5776810 (1998-07-01), Guterman et al.
patent: 5780925 (1998-07-01), Cipolla et al.
patent: 5781031 (1998-07-01), Bertin et al.
patent: 5801437 (1998-09-01), Burns
patent: 5835396 (1998-11-01), Zhang
patent: 5883409 (1999-03-01), Guterman et al.
patent: 5889302 (1999-03-01), Liu
patent: 5915167 (1999-06-01), Leedy
patent: 5930608 (1999-07-01), Yamazaki et al.
patent: 5936280 (1999-08-01), Liu
patent: 5969380 (1999-10-01), Syyedy
patent: 5976953 (1999-11-01), Zavracky et al.
patent: 5978258 (1999-11-01), Manning
patent: 5981974 (1999-11-01), Makita
patent: 5985693 (1999-11-01), Leedy
patent: 6005270 (1999-12-01), Noguchi
patent: 6028326 (2000-02-01), Uochi et al.
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6057598 (2000-05-01), Payne et al.
patent: 6072234 (2000-06-01), Camien et al.
patent: 6087722 (2000-07-01), Lee et al.
patent: 6107666 (2000-08-01), Chang
patent: 6110278 (2000-08-01), Saxena
patent: 6114767 (2000-09-01), Nagai et al.
patent: 6133640 (2000-10-01), Leedy
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6197641 (2001-03-01), Hergenrother et al.
patent: 6208545 (2001-03-01), Leedy
patent: RE37259 (2001-07-01), Ovshinsky
patent: 6281042 (2001-08-01), Ahn et al.
patent: 6291858 (2001-09-01), Ma et al.
patent: 6307257 (2001-10-01), Huang et al.
patent: 6314013 (2001-11-01), Ahn et al.
patent: 6322903 (2001-11-01), Siniaguine et al.
patent: 6337521 (2002-01-01), Masuda
patent: 6351028 (2002-02-01), Akram
patent: 6353265 (2002-03-01), Michil
patent: 6355501 (2002-03-01), Fung et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6612570 (2003-09-01), Cox
patent: 6627518 (2003-09-01), Inoue et al.
patent: 6653733 (2003-11-01), Gonzalez et al.
patent: 6713810 (2004-03-01), Bhattacharyya
patent: 6888750 (2005-05-01), Walker et al.
patent: 7125763 (2006-10-01), Sobek et al.
patent: 2001/0033030 (2001-10-01), Leedy
patent: 2001/0054759 (2001-12-01), Nishiura
patent: 2001/0055838 (2001-12-01), Walker et al.
patent: 2002/0024146 (2002-02-01), Furusawa
patent: 2002/0027275 (2002-03-01), Fujimoto et al.
patent: 2002/0028541 (2002-03-01), Lee et al.
patent: 2002/0030262 (2002-03-01), Akram
patent: 2002/0030263 (2002-03-01), Akram
patent: 2003/0030074 (2003-02-01), Walker et al.
patent: 2003/0057435 (2003-03-01), Walker
patent: 2003/0173643 (2003-09-01), Herner
patent: 2003/0218920 (2003-11-01), Harari
patent: 2004/0000679 (2004-01-01), Patel et al.
patent: 0 073 486 (1982-08-01), None
patent: 0 387 834 (1990-09-01), None
patent: 0 395 886 (1990-11-01), None
patent: 0 516 866 (1992-12-01), None
patent: 0 606 653 (1994-07-01), None
patent: 0 644 548 (1994-09-01), None
patent: 0 800 137 (1997-03-01), None
patent: 0 971 416 (2000-01-01), None
patent: 61-222216 (1986-10-01), None
patent: 6-22352 (1994-01-01), None
patent: 63-52463 (1998-03-01), None
patent: 10-190016 (1999-06-01), None
patent: WO 94/26083 (1994-11-01), None
John H. Douglas: “The Route to 3-D Chips,” High Technology. Sep. 1983, pp. 55-59, vol. 3, No. 9, High Technology Publishing Corporation, Boston, MA.
M. Arienzo et al.: “Diffusion of Arsenic in Bilayer Polycrystalline Silicon Films,” J.
Kouznetsov Igor G.
Walker Andrew J.
Foley & Lardner LLP
Pham Long
SanDisk 3D LLC
LandOfFree
Two mask floating gate EEPROM and method of making does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Two mask floating gate EEPROM and method of making, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Two mask floating gate EEPROM and method of making will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4072487