4. Static information storage and retrieval
  5. Read/write circuit
  6. Noise suppression

Igor G. Kouznetsov

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Anti-fuse memory cell with asymmetric breakdown voltage

Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate

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Memory architecture having a reference current generator...

Static information storage and retrieval – Read/write circuit – Noise suppression
Reexamination Certificate

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Nonvolatile memory on SOI and compound semiconductor...

Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate

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Three terminal nonvolatile memory device with vertical gated...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Two mask floating gate EEPROM and method of making

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2201030

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