TSV-enabled twisted pair

Details TSV-enabled twisted pair TSV-enabled twisted pair

2008-05-30

2010-10-12

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With electrical contact in hole in semiconductor

C257SE23174

Reexamination Certificate

active

07812426

ABSTRACT:
A through-silicon via (TSV) enabled twisted pair is provided. A pair of complementary conductive lines is provided as a twisted pair. Each of the conductive lines of the twisted pair is formed by alternating conductive sections on opposing sides of a substrate. The alternating conductive sections are electrically coupled by at least in part a TSV. The conductive lines overlap or are entwined such the point at which the conductive lines cross, the conductive lines are on opposing sides of the substrate. The conductive lines are weaved in this manner for the length of the conductive trace.

REFERENCES:
patent: 7167378 (2007-01-01), Yamada
patent: 1200010 (1998-11-01), None
Johnson, H., et al., “High-Speed Digital Design—A Handbook of Black Magic,” 1993, pp. 6-8, Prentice Hall PTR, Upper Saddle, New Jersey.

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