Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-16
2005-08-16
Eckert, George (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S396000, C438S003000
Reexamination Certificate
active
06929997
ABSTRACT:
Disclosed is a triple metal line 1T/1C ferroelectric memory device and a method to make the same. A ferroelectric capacitor is connected to the transistor through a buried contact plug. An oxidation barrier layer lies between the contact plug and the lower electrode of the capacitor. A diffusion barrier layer covers the ferroelectric capacitor to prevent diffusion of material into or out of capacitor. As a result of forming the oxidation barrier layer, the contact plug is not exposed to the ambient oxygen atmosphere thereby providing a reliable ohmic contact between the contact plug and the lower electrode. Also, the memory device provides a triple interconnection structure made of metal, which improves device operation characteristics.
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Jung Dong-Jin
Kim Ki-Nam
Eckert George
Lee & Morse P.C.
Richards N. Drew
Samsung Electronics Co,. Ltd.
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