Triangular space element for semiconductor device

Details Triangular space element for semiconductor device Triangular space element for semiconductor device

2007-06-15

2010-11-16

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257S318000, C257SE21640, C257SE21641, C438S231000, C438S595000, C438S981000

Reexamination Certificate

active

07834389

ABSTRACT:
Provided is a semiconductor device including a substrate. A gate formed on the substrate. The gate includes a sidewall. A spacer formed on the substrate and adjacent the sidewall of the gate. The spacer has a substantially triangular geometry. A contact etch stop layer (CESL) is formed on the first gate and the first spacer. The thickness of the CESL to the width of the first spacer is between approximately 0.625 and 16.

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