Treatment of planarizing layer in multilayer electron beam resis

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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430227, 430313, 430323, 430325, 430326, 430272, G03C 500, G03F 726

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047029935

ABSTRACT:
An improved electron beam resist structure comprises an organic planarizing layer which has been treated with an ion beam for a time sufficient to render it conductive and an electron beam resist layer thereover. The electron beam resist layer is preferably oxygen plasma resistant. When the resist layer is not resistant to oxygen plasma and it is desired to develop the planarizing layer by oxygen plasma, the structure additionally includes a thin hard mask layer, suitably of silicon dioxide, interposed between the conductive planarizing layer and the resist layer.

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E. Ong and E. L. Hu, "Multilayer Resists for Fine Line Optical Lithography" Solid State Technology, June 1984, pp. 155-160.
L. V. Gregor and J. G. Wise, "Three-Layer Electron-Beam Resist with High Sensitivity and Contrast", IBM Technical Disclosure Bulletin, vol. 26, No. 11, Apr. 1984, p. 6141.
Wijdenes et al., SPIE, vol. 539, pp. 97-101 (1985).
Tsuji et al., "Submicron Optical Lithography Using a Double Layer Resist by a Single Development Technology" IEEE VLSI Conf. in Kobe, Japan in May, 1985.
Dobkin et al., IEEE Electron Device Letters, vol. Edl-2, No. 9, pp. 222-224, 1981.
Patton, "Paint Flow and Pigment Dispension", John Wiley & Sons, pp. 244 and 245, 1979.

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