Treatment of dielectric material to enhance etch rate

Details Treatment of dielectric material to enhance etch rate Treatment of dielectric material to enhance etch rate

2005-06-14

2005-06-14

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S689000, C438S706000

Reexamination Certificate

active

06905971

ABSTRACT:
In one embodiment, the present invention relates to a method for pre-treating and etching a dielectric layer in a semiconductor device comprising the steps of: (A) pre-treating one or more exposed portions of a dielectric layer with a plasma in a plasma etching tool to increase removal rate of the one or more exposed portions upon etching; and (B) removing the one or more exposed portions of the dielectric layer in the same plasma etching tool of step (A) via plasma etching.

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