Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-08-01
2006-08-01
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
73, 73, 73, C134S001100, C134S001200, C134S001300
Reexamination Certificate
active
07084070
ABSTRACT:
A method for processing substrate to form a semiconductor device is disclosed. The substrate includes an etch stop layer disposed above a metal layer. The method includes etching through the etch stop layer down to the copper metal layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, thereby forming etch stop layer openings in the etch stop layer. The etch stop layer includes at least one of a SiN and SiC material. Thereafter, the method includes performing a wet treatment on the substrate using a solution that contains acetic acid (CH3COOH) or acetic acid/ammonium hydroxide (NH4OH) to remove at least some of the copper oxides. Alternatively, the copper oxides may be removed using a H2plasma. BTA passivation may be optionally performed on the substrate.
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Deshmukh Subhash
Kang Sean S.
Kim Ji Soo
Lee Sang-heon
Sadjadi S M Reza
Deo Duy-Vu N.
IP Strategy Group, P.C.
Lam Research Corporation
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