Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-22
2008-12-30
Menz, Douglas M (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S330000, C257SE21428
Reexamination Certificate
active
07470588
ABSTRACT:
A transistor includes a substrate and an isolation region disposed in the substrate. The isolation regions defines an active region comprising upper and lower active regions, the upper active region having a first width and the lower active region having a second width greater than the first width. An insulated gate electrode extends through the upper active region and into the lower active region. Source and drain regions are disposed in the active region on respective first and second sides of the insulated gate electrode. The insulated gate electrode may include an upper gate electrode disposed in the upper active region and a lower gate electrode disposed in the lower active region, wherein the lower gate electrode is wider than the upper gate electrode. Related fabrication methods are described.
REFERENCES:
patent: 5895253 (1999-04-01), Akram
patent: 6476444 (2002-11-01), Min
patent: 6844591 (2005-01-01), Tran
patent: 7141486 (2006-11-01), Rossi et al.
patent: 2001/0023960 (2001-09-01), Soga et al.
patent: 2001/0036705 (2001-11-01), Nishida et al.
patent: 2003/0085435 (2003-05-01), Wang
patent: 2006/0049455 (2006-03-01), Jang et al.
patent: 2006/0113590 (2006-06-01), Kim et al.
patent: 2002-353445 (2002-12-01), None
patent: 1020000060693 (2000-10-01), None
patent: 1020010081253 (2001-08-01), None
patent: 1020060077543 (2006-07-01), None
patent: 1020060099179 (2006-09-01), None
patent: 1020060102878 (2006-09-01), None
Korean Office Action dated Jul. 10, 2008; p. 1.
Cho Min-Hee
Kim Ji-Young
Fulk Steven J.
Menz Douglas M
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
LandOfFree
Transistors including laterally extended active regions and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Transistors including laterally extended active regions and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistors including laterally extended active regions and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4028876