Transistor with increased operating voltage and method of fabric

Details Transistor with increased operating voltage and method of fabric Transistor with increased operating voltage and method of fabric

1998-01-05

2000-11-28

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438138, 438268, 438269, H01L 21366

Patent

active

06153451&

ABSTRACT:
A method for increasing the operating voltage of a transistor formed on a substrate of a first conductivity region of a second conductivity type in a surface of the substrate. An N-well adjust region of the first conductivity type is then formed in the N-well region. The N-well adjust region extends to a first depth in the N-well region. A double diffusion well of the first conductivity type is then formed in the N-well. The double diffusion well extends to a second depth greater than the first depth of the N-well adjust region, and contains a portion of the N-well. Two N- channel stop regions are then formed in the N-well. The two N-channel stop regions extending to a third depth greater than the depth of the N-well adjust region, and contain a portion of the N-well.

REFERENCES:
patent: 4794432 (1988-12-01), Yilmaz et al.
patent: 5171699 (1992-12-01), Hutter et al.
patent: 5436179 (1995-07-01), Erdeljac et al.
patent: 5585294 (1996-12-01), Smayling et al.
patent: 5719421 (1998-02-01), Hutter et al.
patent: 5728593 (1998-03-01), Yun et al.

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