Transistor with high dielectric constant gate and method for...

Details Transistor with high dielectric constant gate and method for... Transistor with high dielectric constant gate and method for...

2007-02-20

2007-02-20

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S270000, C257SE21400, C257SE21428

Reexamination Certificate

active

10946494

ABSTRACT:
A semiconductor device provides a gate structure that includes a conductive portion and a high-k dielectric material formed beneath and along sides of the conductive material. An additional gate dielectric material such as a gate oxide may be used in addition to the high-k dielectric material. The method for forming the structure includes forming an opening in an organic material, forming the high-k dielectric material and a conductive material within the opening and over the organic material then using chemical mechanical polishing to remove the high-k dielectric material and conductive material from regions outside the gate region.

REFERENCES:
patent: 5960270 (1999-09-01), Misra et al.
patent: 6251763 (2001-06-01), Inumiya et al.
patent: 6436775 (2002-08-01), Kim et al.
patent: 6607950 (2003-08-01), Henson et al.
patent: 6730581 (2004-05-01), Suguro

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