Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-02-05
2008-12-16
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S296000, C438S299000, C438S655000
Reexamination Certificate
active
07465620
ABSTRACT:
A method of improving the carrier mobility of a transistor is presented. A trench is formed in a substrate. The trench is filled with a dielectric. A CMOS transistor is formed adjacent to the trench. A silicide layer is formed on the source/drain region. After the step of forming the silicide layer, a recess is formed by etching the dielectric so that the surface of the dielectric is substantially lower than the surface of the substrate. Recessing the STI causes the removal of the compressive stress applied to the channel region by the STI material. A contact etch stop layer (CESL) is formed over the gate electrode, spacers, source/drain region and the dielectric. The CESL applies a desired stress to the channel region. Trench liners may optionally be formed to provide a stress to the channel region. A trench spacer may optionally be formed in the STI recess.
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Huang Chien-Chao
Ke Chung-Hu
Ko Chih-Hsin
Luu Chuong A.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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