Transistor fabrication methods and structures thereof

Details Transistor fabrication methods and structures thereof Transistor fabrication methods and structures thereof

2008-05-29

2010-10-26

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21324, C257SE21438

Reexamination Certificate

active

07820518

ABSTRACT:
Methods of fabricating transistors and semiconductor devices and structures thereof are disclosed. In one embodiment, a method of fabricating a transistor includes forming a gate dielectric over a workpiece, forming a gate over the gate dielectric, and forming a stress-inducing material over the gate, the gate dielectric, and the workpiece. Sidewall spacers are formed from the stress-inducing material on sidewalls of the gate and the gate dielectric.

REFERENCES:
patent: 2005/0158955 (2005-07-01), Yang et al.
patent: 2005/0224867 (2005-10-01), Huang et al.
patent: 2007/0196991 (2007-08-01), Nandakumar et al.
patent: 2007/0235823 (2007-10-01), Hsu et al.

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