Transistor devices and methods of making

Details Transistor devices and methods of making Transistor devices and methods of making

2010-01-26

2011-12-27

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S288000, C438S719000, C257SE21409, C257SE29255

Reexamination Certificate

active

08084329

ABSTRACT:
In an embodiment, a method of fabricating a transistor device comprises: providing a semiconductor topography comprising a gate conductor disposed above a semiconductor substrate between a pair of dielectric spacers; anisotropically etching exposed regions of the semiconductor substrate on opposite sides of the dielectric spacers to form recessed regions in the substrate; oxidizing exposed surfaces of the substrate in the recessed regions to form an oxide thereon; removing the oxide from bottoms of the recessed regions while retaining the oxide upon sidewalls of the recessed regions; and isotropically etching the substrate such that the recessed regions undercut the pair of dielectric spacers.

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patent: 7838372 (2010-11-01), Han et al.
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patent: 2010/0187578 (2010-07-01), Faltermeier et al.
patent: 2010/0237431 (2010-09-01), Feudel et al.

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