Transistor device and method

Details Transistor device and method Transistor device and method

2007-11-20

2007-11-20

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21093, C257SE21188, C257SE21371, C257SE21387, C438S047000, C438S094000, C438S172000, C438S191000, C438S312000

Reexamination Certificate

active

11102594

ABSTRACT:
A method for making a heterojunction bipolar transistor includes the following steps: forming a heterojunction bipolar transistor by depositing, on a substrate, subcollector, collector, base, and emitter regions of semiconductor material; the step of depositing the subcollector region including depositing a material composition transition from a relatively larger bandgap material nearer the substrate to a relatively smaller bandgap material adjacent the collector; and the step of depositing the collector region including depositing a material composition transition from a relatively smaller bandgap material adjacent the subcollector to a relatively larger bandgap material adjacent the base.

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