Transistor and process of making a transistor having an improved

Details Transistor and process of making a transistor having an improved Transistor and process of making a transistor having an improved

1996-12-10

2000-04-25

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438305, 438624, 438780, H01L 21336

Patent

active

060543566

ABSTRACT:
A transistor is provided with a gradually increasing source and drain arsenic doping profile in a lateral direction from the gate conductor sidewall surfaces. The very smooth doping profile ensures small electric fields at the channel-drain interface for the benefit of reducing hot-carrier effects. Such a doping profile may be achieved by performing the ion implantation through a non-conformal layer of spin-on glass. By controlling the viscosity of the SOG and its deposition speed, different meniscus shapes may be formed. The doping profile of the arsenic in the source and drain regions follows the profile of the upper surface of the SOG. Arsenic is advantageously used for both the lightly doped and heavily doped regions of the source/drain junctions. Arsenic has lower mobility compared to phosphorus and is better at maintaining its original doping profile in heating of the device during further processing. Too much alteration in the original doping profile over time may change the device characteristics beyond acceptable levels.

REFERENCES:
patent: 4068019 (1978-01-01), Boeckl
patent: 4532697 (1985-08-01), Ko
patent: 4603472 (1986-08-01), Schwabe et al.
patent: 4728617 (1988-03-01), Woo et al.
patent: 4755479 (1988-07-01), Miura
patent: 5234852 (1993-08-01), Liou
patent: 5281552 (1994-01-01), King et al.
patent: 5428240 (1995-06-01), Lur
patent: 5478776 (1995-12-01), Luftman et al.
patent: 5482876 (1996-01-01), Hsieh et al.
patent: 5548149 (1996-08-01), Joyner
patent: 5569624 (1996-10-01), Weiner
patent: 5585658 (1996-12-01), Mukai et al.
patent: 5599734 (1997-02-01), Byun et al.
patent: 5849615 (1998-12-01), Ahmad et al.

Affiliated with

Also associated with

Rating

Transistor and process of making a transistor having an improved does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor and process of making a transistor having an improved, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor and process of making a transistor having an improved will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-992820