Topology induced plasma enhancement for etched uniformity improv

Details Topology induced plasma enhancement for etched uniformity improv Topology induced plasma enhancement for etched uniformity improv

1993-11-17

1995-12-05

Nguyen, Nam

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 20419232, 20429833, B08B 700, C23F 102

Patent

active

054725658

ABSTRACT:
A plasma discharge electrode having a front surface with a central portion thereof including outlets for discharging reactant gas which forms a plasma and a peripheral portion substantially surrounding the outlets. The peripheral portion has at least one recess for locally enhancing a density of the plasma formed by the electrode. The recess can be formed in a replaceable insert and the electrode can be made from a single crystal of silicon.

REFERENCES:
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patent: 4724060 (1988-02-01), Sakata et al.
patent: 4780169 (1988-10-01), Stark et al.
patent: 4792378 (1988-12-01), Rose et al.
patent: 4820371 (1989-04-01), Rose
patent: 4960488 (1990-10-01), Law et al.

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