Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-06-17
2008-06-17
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S736000, C430S269000, C430S311000, C430S330000
Reexamination Certificate
active
07387969
ABSTRACT:
A patterned hardmask and method for forming the same, the method including providing a substrate comprising an overlying resist sensitive to activating radiation; forming an overlying hardmask insensitive to the activating radiation; exposing the resist through the hardmask to the activating radiation; baking the resist and the hardmask; and, developing the hardmask and resist to form a patterned resist and patterned hardmask.
REFERENCES:
patent: 6184041 (2001-02-01), Furukawa et al.
patent: 2002/0195419 (2002-12-01), Pavelchek
patent: 2003/0193740 (2003-10-01), Kruger et al.
patent: 2006/0246377 (2006-11-01), Yamato et al.
Chang Vencent
Chen Kuei Shun
Chen Norman
Ku Yao-Ching
Lin Chin-Hsiang
Jr. Carl Whitehead
Rodgers Colleen E
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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