Titanium silicate films with high dielectric constant

Details Titanium silicate films with high dielectric constant Titanium silicate films with high dielectric constant

2006-09-05

2006-09-05

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C438S287000, C438S768000, C438S782000, C438S785000

Reexamination Certificate

active

07101754

ABSTRACT:
A method of making a film with a high dielectric constant uses a spin-on sol-gel process to deposit the film on a substrate, the film having a composition (SiO2)x(TiO2)1−x, where 0.50<x<0.75. The resulting film is annealed in an oxygen-containing atmosphere at a temperature lying in the range of 500° C. to 700° C.

REFERENCES:
patent: 4849296 (1989-07-01), Haluska et al.
patent: 4997482 (1991-03-01), Haluska et al.
patent: 5270267 (1993-12-01), Ouellet
patent: 5320983 (1994-06-01), Ouellet
patent: 5447613 (1995-09-01), Ouellet
patent: 5457073 (1995-10-01), Ouellet
patent: 5470798 (1995-11-01), Ouellet
patent: 5753945 (1998-05-01), Chivukula et al.
patent: 6078493 (2000-06-01), Kang
patent: 6083805 (2000-07-01), Ouellet et al.
patent: 6268620 (2001-07-01), Ouellet et al.
patent: 6300144 (2001-10-01), Wouters et al.
patent: 6352889 (2002-03-01), Nishitsuji
patent: 6365266 (2002-04-01), MacDougall et al.
patent: 6562408 (2003-05-01), Costa et al.
patent: 7026694 (2006-04-01), Ahn et al.
patent: 2003/0011016 (2003-01-01), Agarwal et al.
patent: 2003/0129315 (2003-07-01), Suyal et al.
patent: 2004/0003627 (2004-01-01), Hashima et al.
patent: 2004/0004982 (2004-01-01), Eisler et al.
patent: 0433915 (1991-06-01), None
Brassard, D. et al: High-k titanium silicate thin films grown by reactive magnetron sputtering for CMOS.
“Deposition of thick silica-titania sol-gel films on Si substrates”, R.R.A. Syms et al., Journal of Non-Crystalline Solids 170 (1994) London, UK, 1994 Elsevier Science B.V., XP-002361077, pp. 223-233.

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