Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-11-01
1999-04-13
Brown, Peter Toby
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438245, 438248, 438249, 438386, 438388, 438391, 438392, H01L 218242
Patent
active
058937358
ABSTRACT:
Method for forming three-dimensional device structures comprising a second device having sub-groundrule features formed over a first device is disclosed. A layer having a single crystalline top surface is formed above the first device to provide the base for forming the active area of the second device. the sub-groundrule feature is formed using mandrel and spacers.
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Hammerl Erwin
Ho Herbert L.
Mandelman Jack A.
Poschenrieder Bernhard
Short Alvin P.
Braden Stanton C.
Brown Peter Toby
International Business Machines - Corporation
Siemens Aktiengesellschaft
Thomas Toniae M.
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