Three-dimensional device layout having a trench capacitor

Details Three-dimensional device layout having a trench capacitor Three-dimensional device layout having a trench capacitor

1996-06-21

1998-08-11

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438244, 438245, H01L 218242

Patent

active

057926859

ABSTRACT:
Method for forming three-dimensional device structures comprising a second device formed over a first device is disclosed. A layer having a single crystalline top surface is formed above the first device to provide the base for forming the active area of the second device.

REFERENCES:
patent: 4988637 (1991-01-01), Dhong et al.
patent: 5302541 (1994-04-01), Akazawa
patent: 5627092 (1997-05-01), Alsmeier et al.

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