Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-02-14
2010-06-29
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S171000, C438S210000, C438S238000, C438S239000, C257SE27024, C257SE51003, C257SE51025
Reexamination Certificate
active
07745281
ABSTRACT:
An improved method for forming a capacitor. The method includes the steps of: providing a metal foil; forming a dielectric on the metal foil; applying a non-conductive polymer dam on the dielectric to isolate discrete regions of the dielectric; forming a cathode in at least one discrete region of the discrete regions on the dielectric; and cutting the metal foil at the non-conductive polymer dam to isolate at least one capacitor comprising one cathode, one discrete region of the dielectric and a portion of the metal foil with the discrete region of the dielectric.
REFERENCES:
patent: 6765784 (2004-07-01), Ohya et al.
patent: 7126811 (2006-10-01), Hirano et al.
patent: 7215534 (2007-05-01), Saito et al.
patent: 2006/0120014 (2006-06-01), Nakamura et al.
patent: 2007/0159771 (2007-07-01), Saito et al.
patent: 2007123855 (2007-05-01), None
Chelini Remy J.
Croswell Robert T.
Dunn Gregory
Jacobs David
Kinard John T.
Ghyka Alexander G
Guy Joseph T.
Kemet Electronics Corporation
Motorola Inc.
Mustapha Abdulfattah
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