Thin germanium oxynitride gate dielectric for...

Details Thin germanium oxynitride gate dielectric for... Thin germanium oxynitride gate dielectric for...

2006-07-18

2006-07-18

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S518000, C438S520000, C438S522000, C438S590000, C438S591000, C438S767000, C438S779000, C438S906000, C438S933000

Reexamination Certificate

active

07078300

ABSTRACT:
A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well.

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